參數(shù)資料
型號: H7N1004LM
廠商: Renesas Technology Corp.
英文描述: Silicon N-Channel MOSFET High-Speed Power Switching
中文描述: 硅N溝道MOSFET高速電源開關(guān)
文件頁數(shù): 3/12頁
文件大?。?/td> 135K
代理商: H7N1004LM
H7N1004LD, H7N1004LS, H7N1004LM
Rev.6.00, Aug.27.2003, page 3 of 11
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V
(BR)DSS
100
±
20
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note 1
I
D
= 15 A, V
GS
= 10 V
Note 1
I
D
= 15 A, V
GS
= 4.5 V
Note 1
I
D
= 15 A, V
GS
= 10 V
Note 1
Gate to source breakdown voltage
V
(BR)GSS
±
10
10
V
μ
A
μ
A
V
m
m
S
Gate to source leak current
I
GSS
Zero gate voltage drain current
I
DSS
Gate to source cutoff voltage
V
GS(off)
1.5
2.5
Static drain to source on state
R
DS(on)
25
35
resistance
30
45
Forward transfer admittance
|yfs|
22
37
Input capacitance
Ciss
2800
pF
V
DS
= 10 V
Output capacitance
Coss
240
pF
V
GS
= 0
Reverse transfer capacitance
Crss
140
pF
f = 1 MHz
Total gate charge
Qg
50
nC
V
DD
= 50 V
Gate to source charge
Qgs
9
nC
V
GS
= 10 V
Gate to drain charge
Qgd
11
nC
I
D
= 30 A
Turn-on delay time
td(on)
23
ns
V
GS
= 10 V, I
D
= 15 A
R
L
= 2
Rg = 4.7
Rise time
tr
120
ns
Turn-off delay time
td(off)
70
ns
Fall time
tf
9.5
ns
Body-drain diode forward voltage
V
DF
0.9
V
I
F
= 30 A, V
GS
= 0
Body-drain diode reverse recovery
time
Notes: 1. Pulse test
trr
47
ns
I
F
= 30 A, V
GS
= 0
diF/dt = 100 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H7N1004LS 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOSFET High-Speed Power Switching
H7N1004LS-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) LDPAK(S)-(1) Bulk
H7N1004M 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOSFET High-Speed Power Switching
H7N1005DS-E 制造商:Renesas Electronics Corporation 功能描述:
H7N1005FM-E 制造商:Renesas Electronics Corporation 功能描述: