參數(shù)資料
型號: HA31006ANP
廠商: Renesas Technology Corp.
英文描述: SiGe MMIC High Frequency Low Noise Amplifier
中文描述: 硅鍺MMIC的高頻低噪聲放大器
文件頁數(shù): 7/11頁
文件大?。?/td> 154K
代理商: HA31006ANP
HA31006ANP
REJ03F0174-0300 Rev.3.00 Jul 31, 2007
Page 7 of 10
5 GHz Characteristics
Evaluation Board Circuit
RFin
RFout
C1
0.6 pF
C2
1000 pF
C5
10 pF
V
CC
= 3 V
GND
GND
GND
GND
RFin
GND
RFout
Vctrl
C6
1000 pF
C4
0.3 pF
C7
10 pF
C8
1000 pF
R1
1.5 k
-50
-20
-10
0
10
20
5.0
5.4
6.0
5.2
5.6
V
CC
= 3 V
V
ctrl
= 3 V
S22
S11
S21
.2
.4
.6
1
2
5
1.5
3 4
.8
–10
–5
–3
–2
–1.5
10
5
3
2
1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6
.8
1
4
–4
S11
S22
5.8
-30
-40
Condition: V
CC
= 3 V, V
ctrl
= 3 V
f = 4.0 to 6.0 GHz (0.1 GHz step)
S Parameter vs. Frequency
Frequency f (GHz)
S
S Parameter vs. Frequency
Vctrl = 3 V
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