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參數(shù)資料
| 型號： | HA31006ANPTL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | SiGe MMIC High Frequency Low Noise Amplifier |
| 中文描述： | 硅鍺MMIC的高頻低噪聲放大器 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 154K |
| 代理商： | HA31006ANPTL-E |
HA31006ANP
REJ03F0174-0300 Rev.3.00 Jul 31, 2007
Page 3 of 10
2.4 GHz Characteristics
O
o
P
o
P
o
3rd. Order Intermodulation Distortion
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Evaluation Board Circuit
Pin - Pout Characteristics
Pin - Pout Characteristics
C3
1000 pF
Vctrl = 1.8 V
RFin
RFout
C1
2 pF
C2
1 pF
C4
1000 pF
V
CC
= 3 V
L1
1 nH
GND
GND
GND
GND
RFin
GND
RFout
Vctrl
-20
-10
0
-25
-20
-30
-15
-5
0
10
30
0
20
10
25
5
15
-10
20
-20
0
-30
-80
-40
-10
-20
20
-60
-40
0
Pout
Iope
PG
V
CC
= 3 V
V
ctrl
= 1.8 V
f = 2.4 GHz
V
CC
= 3 V
V
ctrl
= 1.8 V
f = 2.4 GHz
Fundamental
(1tone)
IMD3
(2 tone:
f = 1 MHz)
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