參數(shù)資料
型號: HAF1004L
廠商: Renesas Technology Corp.
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.8 to 5.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 硅P通道MOS FET的電源開關(guān)系列
文件頁數(shù): 5/10頁
文件大?。?/td> 122K
代理商: HAF1004L
HAF1004(L), HAF1004(S)
Rev.5.00, Apr.29.2003, page 5 of 10
–1.6
–2.0
–1.2
–0.8
–0.4
0
–2
–4
–6
–8
–10
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
V
D
(
D
–0.1
–0.2
–0.5
–1
–2
–5
–10
1000
200
500
100
20
50
10
Drain Current I
D
(A)
D
R
D
(
)
D
R
D
(
)
Static Drain to Source State Resistance
vs. Drain Current
500
400
300
200
100
–25
0
25
50
75
100
125
0
Pulse Test
Case Temperature Tc (
°
C)
Drain to Source On State Resistance
vs. Temperature
10
2
1
5
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Tc = –25
°
C
V = –10 V
Pulse Test
F
–2.5 A
I = –5 A
–1 A
V = –10 V
V = –4 V
–1 A
–1 A
I = –5 A
–2.5 A
-2.5 A
–5 A
0.01
0.1
1
10
0.5
0.2
0.1
0.01
0.02
0.05
25
°
C
75
°
C
V = –4 V
–10 V
Pulse Test
相關(guān)PDF資料
PDF描述
HAF1004 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.6 to 4.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
HAF1004S Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.7 to 4.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
HAF1009 Silicon P Channel MOS FET Series Power Switching
HAF1009L Silicon P Channel MOS FET Series Power Switching
HAF1009S Silicon P Channel MOS FET Series Power Switching
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