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參數(shù)資料
| 型號： | HAF1009 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Series Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開關(guān)系列 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 110K |
| 代理商： | HAF1009 |
HAF1009(L), HAF1009(S)
Rev.1.00, May.13.2003, page 5 of 10
-1.6
-2.0
-1.2
-0.8
-0.4
0
-2
-4
-6
-8
-10
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
50
100
-0.1
-0.5 -1
Drain Current I
D
(A)
-5 -10
-50 -100
20
10
2
5
1
Static Drain to Source Sate Resistance
vs. Drain Current
100
80
60
40
20
-25
0
25
50
75
100 125 150
0
Pulse Test
Case Temperature Tc (
°
C)
D
D
(
)
D
D
(
)
Static Drain to Source on State Resistance
vs. Temperature
100
20
10
50
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
-20 A
I = -40 A
-10 A
V = -10 V
V = -4 V
-10 A
I = -40 A
-20 A
-10 A
-20 A
-40 A
-0.1
-1
-10
-100
5
2
1
0.1
0.2
0.5
Tc = -25
°
C
25
°
C
75
°
C
V = -10 V
Pulse Test
V = -4 V
-10 V
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAF1009L | Silicon P Channel MOS FET Series Power Switching |
| HAF1009S | Silicon P Channel MOS FET Series Power Switching |
| HAF2012L | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012S | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB |
| HAF2014 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF1009-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF1009L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
| HAF1009S | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF1010RJ | 制造商:Renesas Electronics Corporation 功能描述: |
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