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參數(shù)資料
| 型號(hào)： | HAF1009S |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Series Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開(kāi)關(guān)系列 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | HAF1009S |
HAF1009(L), HAF1009(S)
Rev.1.00, May.13.2003, page 2 of 10
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
–16
V
Gate to source voltage
V
GSS
2.5
V
Drain current
I
D
I
D
(pulse)
Note
1
–40
A
Drain peak current
–80
A
Body-drain diode reverse drain
current
I
DR
–40
A
Channel dissipation
Pch
Note
2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
Typical Operation Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
V
IH
–3.5
—
—
V
Input voltage
V
IL
—
—
–1.2
V
I
IH1
—
—
–100
μA
Vi = –8 V, V
DS
= 0
I
IH2
—
—
–50
μA
Vi = –3.5 V, V
DS
= 0
Input current
(Gate non shut down)
I
IL
—
—
–1
μA
Vi = –1.2 V, V
DS
= 0
I
IH(sd)1
—
–0.8
—
mA
Vi = –8 V, V
DS
= 0
Input current
(Gate shut down)
I
IH(sd)2
—
–0.35
—
mA
Vi = –3.5 V, V
DS
= 0
Shut down temperature
Tsd
—
175
—
°C
Channel temperature
Gate operation voltage
Vop
–3.5
—
–12
V
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參數(shù)描述 |
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