參數(shù)資料
型號(hào): HAT1020
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 55K
代理商: HAT1020
HAT1020R
3
Main Characteristics
4.0
3.0
2.0
1.0
0
C
50
100
150
200
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
10 μs 100 μs
–0.1
–100
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–30
–3
–0.3
–0.03
Operation in
this area is
limited by R
DS(on)
1ms
PW=10ms
Noe4
Ta = 25 °C
1 shot pulse
–20
–16
–12
–8
–4
0
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
–10 V
–6 V
–5 V
–4.5 V
Pulse Test
V = –2.5 V
–3.5 V
–3 V
–4 V
–2
–4
–6
–8
–10
–20
–16
–12
–8
–4
0
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
–1
–2
–3
–4
–5
Tc = –25 °C
75 °C
25 °C
V = –10 V
Pulse Test
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
DCOpeaion(PW<10s
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