參數(shù)資料
型號(hào): HAT1024
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開關(guān)
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 53K
代理商: HAT1024
HAT1024R
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
V
I
D
= –10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
±
10
μ
A
μ
A
V
GS
=
±
16V, V
DS
= 0
V
DS
= –30 V, V
GS
= 0
V
DS
= –10V,
I
D
= –1mA
I
D
= –2A, V
GS
= –10V
Note4
I
D
= –2A, V
GS
= –4V
Note4
I
D
= –2A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
Zero gate voltege drain current
–10
Gate to source cutoff voltage
–1.0
–2.5
V
Static drain to source on state
0.12
0.16
resistance
0.2
0.34
Forward transfer admittance
2.5
3.5
S
Input capacitance
350
pF
Output capacitance
Coss
230
pF
Reverse transfer capacitance
Crss
75
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
18
ns
V
GS
= –4V, I
D
= –2A
V
DD
–10V
Rise time
110
ns
Turn-off delay time
20
ns
Fall time
30
ns
Body–drain diode forward
voltage
–1.0
–1.5
V
IF = –3.5A, V
GS
= 0
Note4
Body–drain diode reverse
recovery time
Note:
4. Pulse test
t
rr
60
ns
IF = –3.5A, V
GS
= 0
diF/ dt =20A/
μ
s
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