參數(shù)資料
型號: HAT1024R
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET(P溝道功率MOSFET)
中文描述: 硅P通道功率MOS FET性(P溝道功率MOSFET的)
文件頁數(shù): 2/10頁
文件大?。?/td> 73K
代理商: HAT1024R
HAT1024R
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
–30
V
Gate to source voltage
±
20
V
Drain current
–3.5
A
Drain peak current
Note1
–28
A
Body–drain diode reverse drain current I
DR
Channel dissipation
–3.5
A
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Tstg
–55 to +150
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參數(shù)描述
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