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參數(shù)資料
| 型號(hào)： | HAT1029R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 53K |
| 代理商： | HAT1029R |
HAT1029R
6
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
500
200
100
20
50
10
5
–0.1
0
2000
1000
500
200
100
50
20
–4
–8
–12
–16
–20
0
–10
–20
–30
–40
0
0
–2
–4
–6
–8
–10
20
–50
4
8
12
16
DS
V
GS
V
V = –5 V
–10 V
–20 V
V = –20 V
–10 V
–5 V
I = –3.5 A
–0.2
–0.5
–1
–2
–5
–10
di / dt = 20 A /
μ
s
V = 0, Ta = 25
°
C
Ciss
Coss
Crss
V = 0
f = 1 MHz
Drain Current I (A)
S
Switching Characteristics
500
200
100
20
50
10
5
–0.1
–0.2
–0.5
–1
–2
–5
–10
tf
r
d(off)
t
d(on)
t
V = –4 V, V = –10 V
PW = 3
μ
s, duty < 1 %
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT1030T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 3A I(D) | SO |
| HAT1031T | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1033T | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1035R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOSFET High Speed Power Switching |
| HAT1035R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOSFET High Speed Power Switching |
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