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參數(shù)資料
| 型號(hào)： | HAT1031T |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | HAT1031T |
HAT1031T
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
–20
V
Gate to source voltage
±
10
V
Drain current
–2.5
A
Drain peak current
Note1
–20
A
Body–drain diode reverse drain current I
DR
Channel dissipation
–2.5
A
Pch
Note2
1
W
Channel dissipation
Pch
Note3
1.5
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
–20
—
—
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
8V, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
V
DS
= –10V,
I
D
= –1mA
I
D
= –2A, V
GS
= –4V
Note4
I
D
= –2A, V
GS
= –2.5V
Note4
I
D
= –2A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
±
10
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
–1
Gate to source cutoff voltage
–0.5
—
–1.5
V
Static drain to source on state
—
0.13
0.16
resistance
—
0.21
0.28
Forward transfer admittance
2.6
4
—
S
Input capacitance
—
390
—
pF
Output capacitance
Coss
—
200
—
pF
Reverse transfer capacitance
Crss
—
70
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
14
—
ns
V
GS
= –4V, I
D
= –2A
V
DD
≈
–10V
Rise time
—
75
—
ns
Turn-off delay time
—
60
—
ns
Fall time
—
55
—
ns
Body–drain diode forward voltage
—
–0.9
–1.17
V
IF = –2.5A, V
GS
= 0
Note4
IF = –2.5A, V
GS
= 0
diF/ dt =20A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
45
—
ns
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