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參數(shù)資料
| 型號(hào)： | HAT1048R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 32K |
| 代理商： | HAT1048R |
HAT1048R
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
-30
—
—
V
I
D
= -10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
± 20
—
—
V
I
G
= ±100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
± 10
μ
A
μ
A
V
GS
= ±16 V, V
DS
= 0
V
DS
= -30 V, V
GS
= 0
Zero gate voltege drain
current
—
—
-1
Gate to source cutoff voltage V
GS(off)
Static drain to source on state R
DS(on)
resistance
-1.0
—
-2.5
V
m
m
S
V
DS
= -10 V,
I
D
= -1 mA
I
D
= -8 A, V
GS
= -10 V
I
D
= -8 A, V
GS
= -4.5V
I
D
= -8 A, V
DS
= -10 V
V
DS
= -10 V
V
GS
= 0
f = 1 MHz
—
5.5
7.0
Note3
R
DS(on)
|y
fs
|
Ciss
—
9.5
13.5
Note3
Forward transfer admittance
(18)
(30)
—
Note3
Input capacitance
—
(5700)
—
pF
Output capacitance
Coss
—
(1250)
—
pF
Reverse transfer capacitance Crss
—
(710)
—
pF
Total gate charge
Qg
—
(105)
—
nc
V
DD
= -10 V
V
GS
= -10 V
I
D
= -16 A
V
GS
= -10 V, I
D
= -8 A
V
DD
= 10 V
R
L
= 1.25
R = 4.7
IF = -16 A, V
GS
= 0
Gate to source charge
Qgs
—
(14)
—
nc
Gate to drain charge
Qgd
—
(20)
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
(25)
—
ns
Rise time
—
(100)
—
ns
Turn-off delay time
—
(550)
—
ns
Fall time
—
(320)
—
ns
Body–drain diode forward
voltage
—
(0.9)
(1.17)
V
Note3
Body–drain diode reverse
recovery time
Note:
3. Pulse test
t
rr
—
(50)
—
ns
IF = -16 A, V
GS
= 0
diF/ dt = 50 A/ μs
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