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參數(shù)資料
| 型號： | HAT1051T |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HAT1051T |
HAT1051T
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
-30
V
Gate to source voltage
±20
V
Drain current
-9.0
A
Drain peak current
Note1
-72
A
Body-drain diode reverse drain current I
DR
Channel dissipation
-9.0
A
Pch
Note2
1.3
W
Channel temperature
Tch
150
°C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
-30
—
—
V
I
D
= -10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
± 20
—
—
V
I
G
= ±100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±10
μ
A
μ
A
V
GS
= ±16V, V
DS
= 0
V
DS
= -30 V, V
GS
= 0
Zero gate voltege drain
current
—
—
-1
Gate to source cutoff voltage V
GS(off)
Static drain to source on state R
DS(on)
resistance
-1.0
—
-2.0
V
m
m
S
V
DS
= -10V,
I
D
= -1mA
I
D
=-4.5A, V
GS
=-10V
I
D
=-4.5A, V
GS
=-4V
I
D
=-4.5A, V
DS
=-10V
V
DS
= -10V
V
GS
= 0
f = 1MHz
—
12
15
Note3
R
DS(on)
|y
fs
|
Ciss
—
20
28
Note3
Forward transfer admittance
TBD
TBD
—
Note3
Input capacitance
—
TBD
—
pF
Output capacitance
Coss
—
TBD
—
pF
Reverse transfer capacitance Crss
—
TBD
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
TBD
—
ns
V
GS
=- 10V, I
D
= -4.5A
V
DD
= -10V
R
L
=2.22
R
g
=4.7
IF =-9.0A, V
GS
= 0
Rise time
—
TBD
—
ns
Turn-off delay time
—
TBD
—
ns
Fall time
—
TBD
—
ns
Body–drain diode forward
voltage
—
TBD
TBD
V
Note3
Body–drain diode reverse
recovery time
Note:
3. Pulse test
t
rr
—
TBD
—
ns
IF = -9.0A, V
GS
= 0
diF/ dt =20A/μs
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