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參數(shù)資料
| 型號： | HAT1110R-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET Power Switching |
| 中文描述： | 硅P通道功率MOS場效應管電源開關 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 218K |
| 代理商： | HAT1110R-EL-E |
HAT1110R
Rev.2.00, Oct.07.2007, page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
–80
±20
—
—
–1.0
—
—
0.4
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.8
1.02
0.8
170
24
16
3.6
0.3
0.7
14
12
25
5.5
–0.86
21
Max
—
—
±10
–1
–2.5
1.05
1.38
—
—
—
—
—
—
—
—
—
—
—
–1.12
—
Unit
V
V
μ
A
μ
A
V
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100
μ
A, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= –80 V, V
GS
= 0
V
DS
= –10 V,
I
D
= –1mA
I
D
= –0.5 A, V
GS
= –10 V
Note4
I
D
= –0.5 A, V
GS
= – 4.5 V
Note4
I
D
= –0.5 A, V
DS
= –10 V
Note4
V
DS
= –10 V
V
GS
= 0
f = 1MHz
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
V
DD
= -25 V
V
GS
= -10 V
I
D
= -1.0 A
V
GS
= –10 V, I
D
= –0.5 A
V
DD
≈
–30 V
R
L
= 60
R
g
= 4.7
IF = –1.0 A, V
GS
= 0
Note4
IF = –1.0 A, V
GS
= 0
diF/ dt = 100 A/
μ
s
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