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參數(shù)資料
| 型號： | HAT1111C-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開關 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 153K |
| 代理商： | HAT1111C-EL-E |
HAT1111C
Rev.6.00 May 19, 2005 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
V
(BR)GSS
Min.
–60
–20
+10
—
—
–1
—
—
0.65
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
Max.
—
—
Unit
V
V
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
I
GSS
I
DSS
V
GS(th)
R
DS(on)
—
—
—
245
310
1
290
40
20
6
0.7
1.2
20
25
37
4
–0.85
±
10
-1
-2
307
450
—
—
—
—
—
—
—
—
—
—
—
–1.2
μ
A
μ
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
GS
= –16 / +8 V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
I
D
= –1 mA, V
DS
= -10 V
Note3
I
D
= –1 A, V
GS
= -10 V
Note3
I
D
= –1 A, V
GS
= -4.5 V
Note3
I
D
= –1 A, V
DS
= -10 V
Note3
V
DS
= –10 V, V
GS
= 0
f = 1 MHz
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
| y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
V
DS
= –10 V, V
GS
= –10 V
I
D
= –2 A
V
DS
= –10 V, V
GS
= –10 V
I
D
= –1 A, R
L
= 10
,
R
g
= 4.7
I
F
= –2 A, V
GS
= 0
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