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參數(shù)資料
| 型號(hào)： | HAT2028RJ |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | HAT2028RJ |
HAT2028R/HAT2028RJ
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdownvoltage
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
Gate to source breakdownvoltage
±
20
—
—
V
Gate to source leak current
—
—
±
10
μ
A
μ
A
μ
A
μ
A
μ
A
Zero gate voltage
HAT2028R
—
—
1
drain current
HAT2028RJ I
DSS
HAT2028R
—
—
0.1
Zero gate voltage
I
DSS
—
—
—
V
DS
= 48 V, V
GS
= 0
Ta = 125
°
C
drain current
HAT2028RJ I
DSS
—
—
10
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
1.3
—
2.3
V
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 2 A, V
GS
= 10 V
Note5
I
D
= 2 A, V
GS
= 4 V
Note5
I
D
= 2 A, V
DS
= 10 V
Note5
V
DS
= 10 V
V
GS
= 0
f = 1MHz
Static drain to source on state resistance
—
0.08
0.1
—
0.12
0.16
Forward transfer admittance
3.3
5
—
S
Input capacitance
—
280
—
pF
Output capacitance
Coss
—
150
—
pF
Reverse transfer capacitance
Crss
—
55
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
15
—
ns
V
GS
= 4 V, I
D
= 2 A
V
DD
30 V
Rise time
—
100
—
ns
Turn-off delay time
—
35
—
ns
Fall time
—
45
—
ns
Body–drain diode forwardvoltage
—
0.88
1.15
V
IF = 4 A, V
GS
= 0
Note5
IF = 4 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse recovery time
—
40
—
ns
Note:
5. Pulse test
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