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參數(shù)資料
| 型號： | HAT2029 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 56K |
| 代理商： | HAT2029 |
HAT2029R
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
28
V
Gate to source voltage
±
12
V
Drain current
7.5
A
Drain peak current
Note1
60
A
Body-drain diode reverse drain current
7.5
A
Channel dissipation
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
– 55 to + 150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
28
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
10 V, V
DS
= 0
V
DS
= 28 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 4 A, V
GS
= 4 V
Note4
I
D
= 4 A, V
GS
= 2.5 V
Note4
I
D
= 4 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
±
12
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
1
Gate to source cutoff voltage
0.4
—
1.4
V
Static drain to source on state
—
0.025
0.033
resistance
—
0.031
0.043
Forward transfer admittance
9.5
15
—
S
Input capacitance
—
780
—
pF
Output capacitance
Coss
—
470
—
pF
Reverse transfer capacitance
Crss
—
190
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
20
—
ns
V
GS
= 4 V, I
D
= 4 A
V
DD
10 V
Rise time
—
170
—
ns
Turn-off delay time
—
140
—
ns
Fall time
—
170
—
ns
Body–drain diode forward voltage
—
0.88
1.15
V
IF = 7.5 A, V
GS
= 0
Note4
IF = 7.5 A, V
= 0
diF/ dt = 20 A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
65
—
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2029R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2029R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 28V 7.5A 8-Pin SOP T/R 制造商:Renesas 功能描述:Trans MOSFET N-CH 28V 7.5A 8-Pin SOP T/R |
| HAT2031T | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2033 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2033R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
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