參數(shù)資料
型號(hào): HAT2033RJ
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET(N溝道功率MOSFET)
中文描述: 硅?通道功率場(chǎng)效應(yīng)晶體管(不適用溝道功率MOSFET的)
文件頁數(shù): 3/8頁
文件大小: 137K
代理商: HAT2033RJ
HAT2033R/HAT2033RJ
3
Main Characteristics
0
50
100
150
200
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.1
0.3
1
3
10
30
100
5
4
3
2
1
0
2
4
6
8
10
5
4
3
2
1
0
1
2
3
4
5
2.0
1.5
1.0
0.5
10
μ
s
100
μ
s
PW=10ms
10V
5 V
4 V
Pulse Test
2.5 V
Tc = 75
°
C
25
°
C
–25
°
C
V = 10 V
Pulse Test
C
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
2DiveOpeaion
1DiveOpeaion
Operation in
this area is
limited by R
DS(on)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Ta = 25
°
C
1 shot Pulse
1 Drive Operation
DCOpeaion(PW<10s
Noe5
V = 2.0 V
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