- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371770 > HAT2058R (Renesas Technology Corp.) Silicon N Channel Power MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號： | HAT2058R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 76K |
| 代理商： | HAT2058R |
HAT2058R/HAT2058RJ
3
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltage
HAT2058R
I
DSS
—
—
1
μ
A
μ
A
μ
A
μ
A
μ
A
V
DS
= 100 V, V
GS
= 0
drain current
HAT2058RJ I
DSS
HAT2058R
—
—
0.1
Zero gate voltage
I
DSS
—
—
—
V
DS
= 80 V, V
GS
= 0
Ta = 125
°
C
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
drain current
HAT2058RJ I
DSS
—
—
10
Gate to source cutoff voltage
I
GSS
V
GS(off)
—
—
±
10
Static drain to source on state
resistance
1.0
—
2.5
V
Forward transfer admittance
|y
fs
|
R
DS(on)
R
DS(on)
Ciss
3
5
—
S
I
D
= 2 A*
1
, V
DS
= 10 V
I
D
= 2 A*
1
, V
GS
= 10 V
I
D
= 2 A*
1
, V
GS
= 4 V
V
DS
= 10 V, V
GS
= 0
f = 1 MHz
Static drain to source on state
—
120
145
m
m
resistance
—
150
180
Input capacitance
—
420
—
pF
Output capacitance
Coss
—
180
—
pF
Reverse transfer capacitance
Crss
—
100
—
pF
Turn-on delay time
td(on)
—
10
—
ns
V
GS
= 10 V, I
D
= 2 A
V
DD
30 V
Rise time
tr
—
30
—
ns
Turn-off delay time
td(off)
—
110
—
ns
Fall time
tf
—
60
—
ns
Body-drain diode forward voltage V
DF
Body-drain diode reverse
recovery time
Note:
1. Pulse test
—
0.85
1.1
V
I
F
= 4 A, V
GS
= 0*
1
I
= 4 A, V
= 0
diF/dt = 50 A/
μ
s
trr
—
75
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAT2058RJ | Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2070R | Silicon N Channel Power MOS FET Power Switching |
| HAT2105T-EL-E | Ultra low capacitance bidirectional ESD protection diode, SOD882 (SOD2), Tape reel SMD |
| HAT2105T | Ultra low capacitance unidirectional ESD protection diodes, SOD882 (SOD2), Tape reel SMD |
| HAT2114R | Silicon N Channel Power MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2058R/HAT2058RJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HAT2058R_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2058R_09 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2058R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2058RJ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。