參數(shù)資料
型號(hào): HAT2070R
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel Power MOS FET Power Switching
中文描述: 硅?通道功率MOS場(chǎng)效應(yīng)管電源開(kāi)關(guān)
文件頁(yè)數(shù): 7/12頁(yè)
文件大小: 66K
代理商: HAT2070R
HAT2070R
5
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Case Temperature Tc (
°
C)
S
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
0.20
0.16
0.12
0.08
0.04
0
4
8
12
16
20
20
10
2
5
1
0.1
0.5
2
5
20
50
40
30
20
10
-40
0
40
80
120
160
0
Pulse Test
I = 10 A
2 A
5 A
1
10
100
0.2
50
V = 4.5 V
10 V
R
D
I = 2 A, 5 A
2 A, 5 A, 10 A
V = 4.5 V
10 V
3
30
0.1
1
10
100
0.3
10
100
30
1
0.3
3
0.1
Tc = -25
°
C
V = 10 V
Pulse Test
75
°
C
25
°
C
10 A
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