參數(shù)資料
型號: HB288096C6
廠商: Hitachi,Ltd.
英文描述: CompactFlash⑩
中文描述: CF卡⑩
文件頁數(shù): 52/66頁
文件大?。?/td> 170K
代理商: HB288096C6
HB288800/640/448/320/256/192/160/128/096/064/032A5
52
DC Characteristics-3
(Ta = 0 to +60C, V
CC
= 5.0 V
±
10%)
32MB/64MB/
96MB/
128MB
160MB/192
MB/256MB/
320MB
448MB/640
MB/800MB
Parameter
Symbol
Typ
Max
Typ
Max
Typ
Max
Unit Test conditions
Sleep/standby
current
I
SP1
0.5
1.0
0.7
1.5
1.0
2.0
mA
CMOS level (control signal =
V
– 0.2 V)
(In Memory card mode and
I/O card mode)
Sector read
current
I
CCR
(DC)
40
75
40
75
40
75
mA
CMOS level (control signal =
V
– 0.2 V) during sector
read transfer
I
(Peak)
80
120
80
120
80
120
mA
Sector write
current
I
CCW
(DC)
45
75
45
75
45
75
mA
CMOS level (control signal =
V
– 0.2 V) during sector
write transfer
I
(Peak)
80
120
80
120
80
120
mA
DC Characteristics-4
(Ta = 0 to +60C, V
CC
= 3.3 V
±
5%)
32MB/64MB/
96MB/
128MB
160MB/192
MB/256MB/
320MB
448MB/640
MB/800MB
Parameter
Symbol
Typ
Max
Typ
Max
Typ
Max
Unit Test conditions
Sleep/standby
current
I
SP1
0.3
1.0
0.4
1.5
0.5
2.0
mA
CMOS level (control signal =
V
– 0.2 V)
(In Memory card mode and
I/O card mode)
Sector read
current
I
CCR
(DC)
25
50
25
50
25
50
mA
CMOS level (control signal =
V
– 0.2 V) during sector
read transfer
I
(Peak)
50
80
50
80
50
80
mA
Sector write
current
I
CCW
(DC)
25
50
25
50
25
50
mA
CMOS level (control signal =
V
– 0.2 V) during sector
write transfer
I
(Peak)
50
100
50
100
50
100
mA
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