• 參數(shù)資料
    型號: HB52F169E1
    廠商: Hitachi,Ltd.
    英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
    中文描述: 128 MB的注冊SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
    文件頁數(shù): 33/57頁
    文件大小: 870K
    代理商: HB52F169E1
    HB52F169E1-75F
    33
    Single Write
    Full-page Burst Stop
    Burst stop command during burst read:
    The burst stop (BST) command is used to stop data output during
    a full-page burst. The BST command sets the output buffer to High-Z and stops the full-page burst read. The
    timing from command input to the last data changes depending on the CE latency setting. In addition, the
    BST command is valid only during full-page burst mode, and is illegal with burst lengths 1, 2, 4 and 8.
    CE Latency = 3, Burst Length = full page
    CE latency
    3
    4
    BST to valid data
    2
    3
    BST to high impedance
    3
    4
    CK
    Command
    Din
    l
    APW
    I
    RAS
    ACTV
    WRIT A
    in
    ACTV
    Note: Internal auto-precharge starts at the timing indicated by " ".
    and an interval of t
    RAS
    (l
    RAS
    ) is required between previous active (ACTV) command
    and internal precharge " ".
    l = 2 clocks
    CK
    Command
    Dout
    out
    out
    out
    out
    l = 3 clocks
    BST
    out
    out
    out
    相關(guān)PDF資料
    PDF描述
    HB52F649E1 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
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