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參數(shù)資料
| 型號： | HBD427T |
| 英文描述： | NPN45V4A25W|Bipolar Transistors |
| 中文描述： | NPN45V4A25W |雙極晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 37K |
| 代理商： | HBD427T |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 2/3
HBD437T
HSMC Product Specification
Characteristics Curve
Safe Operating Area
0.01
0.1
1
10
1
10
100
Forward Voltage-V
CE
(V)
C
C
1ms
100ms
1s
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current I
C
(mA)
h
hFE @ V
CE
=1V
25
o
C
75
o
C
125
o
C
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current I
C
(mA)
h
hFE @ V
CE
=5V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current I
C
(mA)
S
V
CE(sat)
@ I
C
=10I
B
75
o
C
125
o
C
25
o
C
On Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
O
V
BE(on)
@ V
CE
=1V
125
o
C
75
o
C
25
o
C
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| HBD436 | 制造商:HUASHAN 制造商全稱:HUASHAN 功能描述:PNP SILICON TRANSISTOR |
| HBD437D | 制造商:HSMC 制造商全稱:HSMC 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| HBD437T | 制造商:HSMC 制造商全稱:HSMC 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| HBD438T | 制造商:HSMC 制造商全稱:HSMC 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
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