參數(shù)資料
型號： HCPL-5151-200
英文描述： 0.5 Amp Output Current IGBT Gate Drive Optocoupler
中文描述： 0.5安培輸出電流IGBT柵極驅(qū)動光電耦合器
文件頁數(shù)： 4/16頁
文件大?。?/td> 193K
代理商： HCPL-5151-200
12
Applications Information
Eliminating Negative IGBT Gate Drive
To keep the IGBT firmly off, the
HCPL- 5150 has a very low
maximum VOL specification of
1.0 V. The HCPL- 5150 realizes
this very low VOL by using a
DMOS transistor with 4
(typical) on resistance in its
pull down circuit. When the
HCPL- 5150 is in the low state,
the IGBT gate is shorted to the
emitter by Rg + 4 .. Minimizing
Rg and the lead inductance from
the HCPL- 5150 to the IGBT
gate and emitter (possibly by
mounting the HCPL- 5150 on a
small PC board directly above
the IGBT) can eliminate the
need for negative IGBT gate
drive in many applications as
shown in Figure 25. Care should
be taken with such a PC board
design to avoid routing the
IGBT collector or emitter traces
close to the HCPL- 5150 input
as this can result in unwanted
coupling of transient signals
into the HCPL- 5150 and
degrade performance. (If the
IGBT drain must be routed near
the HCPL- 5150 input, then the
LED should be reverse- biased
when in the off state, to prevent
the transient signals coupled
from the IGBT drain from
turning on the HCPL- 5150.)
Selecting the Gate Resistor (Rg) to
Minimize IGBT Switching Losses.
Step 1: Calculate Rg Minimum from
the IOL Peak Specification.
The IGBT and Rg in Figure 26
can be analyzed as a simple RC
circuit with a voltage supplied
by the HCPL- 5150.
(VCC - VEE - VOL)
Rg = –––––––––––––––––
IOLPEAK
(VCC – VEE – 1.7 V)
=
–––––––––––––––––––
IOLPEAK
(15 V + 5 V – 1.7 V)
=
–––––––––––––––––––––
0.6 A
= 30.5
The VOL value of 2 V in the
previous equation is a
conservative value of VOL at the
peak current of 0.6 A (see
Figure 6). At lower Rg values
the voltage supplied by the
HCPL- 5150 is not an ideal
voltage step. This results in
lower peak currents (more
margin) than predicted by this
analysis. When negative gate
drive is not used, VEE in the
previous equation is equal to
zero volts.
Step 2: Check the HCPL-5150 Power
Dissipation and Increase Rg if
Necessary.
The HCPL- 5150 total power
dissipation (PT) is equal to the
sum of the emitter power (PE)
and the output power (PO):
PT = PE + PO
PE = IF VF Duty Cycle
PO = PO(BIAS) + PO (SWITCHING)
= ICC (VCC - VEE) + ESW(Rg,
Qg) f
For the circuit in Figure 26
with IF (worst case) = 18 mA,
Rg = 30.5 , Max Duty Cycle =
80%, Qg = 250 nC, f = 20 kHz
and TA max = 125°C:
PE = 18 mA1.8 V 0.8 = 26 mW
PO = 4.25 mA20 V + 2.0 J20
kHz
= 85 mW + 40 mW
= 125 mW
> 112 mW (PO(MAX)@125°C =
250mW- 23
°C 6mW/°C)
The value of 4.25 mA for ICC in
the previous equation was
obtained by derating the ICC
max of 5 mA (which occurs at -
55
°C) to I
CC max at 125°C.
Since PO for this case is greater
than PO(MAX), Rg must be
increased to reduce the HCPL-
5120 power dissipation.
PO(SWITCHING MAX)
= PO(MAX) - PO(BIAS)
= 112mW – 85 mW
= 27 mW
PO(SWITCHINGMAX)
ESW(MAX) = ––––––––––––––––
f
27 mW
=
––––––––– =
1.35
J
20kHz
For Qg = 250 nC, from Figure
27, a value of ESW = 1.35 J
gives a Rg = 90.
Figure 25. Recommended LED Drive and Application Circuit
+ HVDC
3-PHASE
AC
- HVDC
0.1 F
V CC = 18 V
1
3
+
2
4
8
6
7
5
270
CONTROL
INPUT
Rg
Q1
Q2
74XXX
OPEN
COLLECTOR
_
+5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HCPL-5151-300 功能描述:邏輯輸出光電耦合器 0.5A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube
HCPL-5200 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
HCPL-5200#100 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
HCPL-5200#200 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
HCPL-5200#300 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
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