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參數(shù)資料
| 型號(hào)： | HCPL-5151-300 |
| 英文描述： | 0.5 Amp Output Current IGBT Gate Drive Optocoupler |
| 中文描述： | 0.5安培輸出電流IGBT柵極驅(qū)動(dòng)光電耦合器 |
| 文件頁(yè)數(shù)： | 14/16頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | HCPL-5151-300 |
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7
Package Characteristics
Over recommended operating conditions (TA = -55 to +125°C) unless otherwise specified.
Notes:
1. Maximum pulse width = 10
s, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs with I
O peak minimum
= 0.5 A. See Applications section for additional details on limiting IOH peak.
2. Maximum pulse width = 50
s, maximum duty cycle = 0.5%.
3. In this test VOH is measured with a dc load current. When driving capacitive loads VOH will approach VCC as IOH approaches zero amps.
4. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
5. This is a momentary withstand test, not an operating condition.
6. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
7. The difference between tPHL and tPLH between any two HCPL-5150 parts under the same test condition.
8. Pins 1 and 4 need to be connected to LED common.
9. Common mode transient immunity in the high state is the maximum tolerable |dVCM/dt| of the common mode pulse, VCM, to assure that the output will
remain in the high state (i.e., VO > 15.0 V).
10. Common mode transient immunity in a low state is the maximum tolerable |dVCM/dt| of the common mode pulse, VCM, to assure that the output will
remain in a low state (i.e., VO < 1.0 V).
11. This load condition approximates the gate load of a 1200 V/25 A IGBT.
12. Pulse Width Distortion (PWD) is defined as |tPHL-tPLH| for any given device.
13. Standard parts receive 100% testing at 25
°C (Subgroups 1 and 9). SMD and Class H parts receive 100% testing at 25, 125 and -55°C (Subgroups 1 and 9,
2 and 10, 3 and 11, respectively).
14. Parameters are tested as part of device initial characterization and after design and process changes. Parameters are guaranteed to limits specified for
all lots not specifically tested.
Parameter
Symbol
Test Conditions
Group A
Subgroups
(13)
Limits
Units
Fig.
Note
Min.
Typ.*
Max.
Input-Output
Leakage Current
II-O
VI-O = 1500Vdc
RH = 45%,
t = 5 sec.,
TA = 25°C
1
1.0
A
5, 6
Resistance
(Input-Output)
RI-O
VI-O = 500 VDC
1010
6
Capacitance
(Input-Output)
CI-O
f = 1 MHz
2.34
pF
6
*All typicals at TA = 25°C.
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| HCPL-5200 | 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-5200#100 | 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-5200#200 | 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-5200#300 | 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| HCPL-5201 | 功能描述:高速光耦合器 1Ch 8mA 200mW Hermetically sealed RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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