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參數(shù)資料
| 型號(hào)： | HCS04D |
| 廠商： | Intersil Corporation |
| 英文描述： | JFET; Current Rating:5mA; Voltage Rating:-25V |
| 中文描述： | 輻射加固六角逆變器 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 104K |
| 代理商： | HCS04D |
27
Specifications HCS04MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input to Yn
TPHL
VCC = 4.5V
9
+25
o
C
2
18
ns
VCC = 4.5V
10, 11
+125
o
C, -55
o
C
2
20
ns
Input to Yn
TPLH
VCC = 4.5V
9
+25
o
C
2
20
ns
VCC = 4.5V
10, 11
+125
o
C, -55
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = RF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
21
pF
1
+125
o
C, -55
o
C
-
27
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.2
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Spec Number
518745
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PDF描述 |
|---|---|
| HCS04KMSR | Radiation Hardened Hex Inverter |
| HCS04DMSR | JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V |
| HCS04K | Radiation Hardened Hex Inverter |
| HCS04MS | Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.625W; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):10000; Collector Current:0.5A; Power (Ptot):0.625W |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HCS04DMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
| HCS04HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
| HCS04K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
| HCS04KMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
| HCS04MS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Hex Inverter |
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