參數(shù)資料
型號: HCS04DMSR
廠商: INTERSIL CORP
元件分類: 通用總線功能
英文描述: JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
中文描述: HC/UH SERIES, HEX 1-INPUT INVERT GATE, CDIP14
封裝: SIDE BRAZED, CERAMIC, DIP-14
文件頁數(shù): 5/8頁
文件大?。?/td> 104K
代理商: HCS04DMSR
29
Specifications HCS04MS
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
READ AND RECORD
PRE RAD
POST RAD
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
2, 4, 6, 8, 10, 12
1, 3, 5, 7, 9, 11, 13
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
2, 4, 6, 8, 10, 12
7
-
1, 3, 5, 9, 11, 13, 14
-
-
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
2, 4, 6, 8, 10, 12
14
1, 3, 5, 9, 11, 13
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10K
±
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1K
±
5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V
±
0.5V
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47K
±
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
518745
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