參數(shù)資料
型號: HCS05DMSR
廠商: HARRIS SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
中文描述: HC/UH SERIES, HEX 1-INPUT INVERT GATE, CDIP14
文件頁數(shù): 7/7頁
文件大?。?/td> 107K
代理商: HCS05DMSR
41
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HCS05MS
Die Characteristics
DIE DIMENSIONS:
87 x 88 mils
2.20mm x 2.24mm
METALLIZATION:
Type: AlSi
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
<2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100
μ
m
4 x 4 mils
Metallization Mask Layout
HCS05MS
(
(
(
Y1 (2)
A2 (3)
Y2 (4)
A3 (5)
(12) Y6
(11) A5
(10) Y5
(9) A4
Y
G
Y
Spec Number
518829
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