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參數(shù)資料
| 型號(hào)： | HCS125 |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Quad Buffer, Three-State |
| 中文描述： | 輻射加固四緩沖，三態(tài) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 93K |
| 代理商： | HCS125 |
126
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50
μ
A
+25
o
C
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50
μ
A
+25
o
C
-
0.1
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Force Voltage
= 0V or VCC
+25
o
C
-
±
50
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 2)
+25
o
C
-
-
V
Propagation Delay
Input to Y
TPHL
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25
o
C
2
25
ns
Enable Delay
OE to Y
TPZL
TPZH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25
o
C
2
30
ns
Disable Delay
OE to Y
TPLZ
TPHZ
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25
o
C
2
30
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
+
12
μ
A
IOL/IOH
5
15% of 0 Hour
IOZ
5
±
200nA
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Specifications HCS125MS
Spec Number
518831
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