參數(shù)資料
型號(hào): HCS164MS
廠商: Intersil Corporation
英文描述: Radiation Hardened 8-Bit Serial-In/Parallel-Out Register(抗輻射8位串入并出寄存器)
中文描述: 輻射加固8位Serial-In/Parallel-Out注冊(cè)(抗輻射8位串入并出寄存器)
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 221K
代理商: HCS164MS
234
Specifications HCS164MS
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
+25
o
C
-
-
-
CP to Qn
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
37
ns
MR to Qn
TPHL
VCC = 4.5V
+25
o
C
2
37
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
4.0V is recognized as a logic “1”, and VO
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
μ
A
IOL/IOH
5
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
I
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
II
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test
III
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTES:
1. Alternate group A testing in accordance with method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Spec Number
518756
相關(guān)PDF資料
PDF描述
HCS164D Radiation Hardened 8-Bit Serial-In/Parallel-Out Register
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