參數(shù)資料
型號： HCS195MS
廠商： Intersil Corporation
英文描述： Radiation Hardened Inverting 8-Bit Parallel-Input/Serial Output Shift Register
中文描述： 輻射加固反相8位Parallel-Input/Serial輸出移位寄存器
文件頁數(shù)： 3/9頁
文件大小： 229K
代理商： HCS195MS
282
Specifications HCS195MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .±
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All voltage reference to VSS)
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/
o
C
θ
JA
θ
JC
73
o
C/W
114
o
C/W
24
o
C/W
29
o
C/W
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . . .10ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
μ
A
2, 3
+125
o
C, -55
o
C
-
750
μ
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
μ
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
μ
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
μ
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
μ
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
±
0.5
μ
A
2, 3
+125
o
C, -55
o
C
-
±
5.0
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
518760
相關(guān)PDF資料
PDF描述
HCS195KMSR Radiation Hardened Inverting 8-Bit Parallel-Input/Serial Output Shift Register
HCS201 KEELOQ Code Hopping Encoder
HCS20HMSR Radiation Hardened Dual 4-Input NAND Gate
HCS20D Radiation Hardened Dual 4-Input NAND Gate
HCS20DMSR Radiation Hardened Dual 4-Input NAND Gate
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HCS200 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:KEELOQ CODE HOPPING ENCODER
HCS200/P 功能描述:編碼器、解碼器、復用器和解復用器 3.5-13V RoHS:否 制造商:Micrel 產(chǎn)品:Multiplexers 邏輯系列:CMOS 位數(shù): 線路數(shù)量（輸入/輸出）:2 / 12 傳播延遲時間:350 ps, 400 ps 電源電壓-最大:2.625 V, 3.6 V 電源電壓-最小:2.375 V, 3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-44 封裝:Tray
HCS200-/P 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:KEELOQ Code Hopping Encoder
HCS200/SN 功能描述:編碼器、解碼器、復用器和解復用器 3.5-13V RoHS:否 制造商:Micrel 產(chǎn)品:Multiplexers 邏輯系列:CMOS 位數(shù): 線路數(shù)量（輸入/輸出）:2 / 12 傳播延遲時間:350 ps, 400 ps 電源電壓-最大:2.625 V, 3.6 V 電源電壓-最小:2.375 V, 3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-44 封裝:Tray
HCS200-/SN 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:KEELOQ Code Hopping Encoder
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*