參數(shù)資料
型號(hào): HCS20HMSR
廠商: HARRIS SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: Radiation Hardened Dual 4-Input NAND Gate
中文描述: HC/UH SERIES, DUAL 4-INPUT NAND GATE, UUC12
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 179K
代理商: HCS20HMSR
50
HCS20MS
Die Characteristics
DIE DIMENSIONS:
87 x 88 mils
2.20mm x 2.24mm
METALLIZATION:
Type: AlSi
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
<2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100
μ
m
4 x 4 mils
Metallization Mask Layout
HCS20MS
A1
(1)
VCC
(14)
D2
(13)
B1 (2)
NC (3)
C1 (4)
D1 (5)
(6)
Y1
(7)
GND
(8)
Y2
(9) A2
(10) B2
(11) NC
(12) C2
Spec Number
518761
相關(guān)PDF資料
PDF描述
HCS20D Radiation Hardened Dual 4-Input NAND Gate
HCS20DMSR Radiation Hardened Dual 4-Input NAND Gate
HCS20K Radiation Hardened Dual 4-Input NAND Gate
HCS20KMSR Radiation Hardened Dual 4-Input NAND Gate
HCS20MS Radiation Hardened Dual 4-Input NAND Gate
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