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參數(shù)資料
| 型號： | HCS20MS |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Dual 4-Input NAND Gate |
| 中文描述： | 輻射加固雙路4輸入與非門 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 179K |
| 代理商： | HCS20MS |
47
Specifications HCS20MS
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
READ AND RECORD
PRE RAD
POST RAD
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
3, 6, 8, 11
1, 2, 4, 5, 7, 9, 10, 12,
13
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
3, 6, 8, 11
7
-
1, 2, 4, 5, 9, 10, 12,
13, 14
-
-
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
3, 6, 8, 12
14
1, 2, 4, 5, 9, 10,
12, 13
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10K
±
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1K
±
5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V
±
0.5V
3, 6, 8, 11
7
1, 2, 4, 5, 9, 10, 12, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47K
±
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
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| HCS240HMSR | Radiation Hardened Octal Buffer/Line Driver, Three-State |
| HCS240MS | Radiation Hardened Octal Buffer/Line Driver, Three-State(抗輻射八緩沖器/線驅(qū)動器（三態(tài)）) |
| HCS240D | Radiation Hardened Octal Buffer/Line Driver, Three-State |
| HCS240DMSR | Radiation Hardened Octal Buffer/Line Driver, Three-State |
| HCS240K | Radiation Hardened Octal Buffer/Line Driver, Three-State |
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