參數資料
型號: HCS244DMSR
廠商: INTERSIL CORP
元件分類: 通用總線功能
英文描述: Radiation Hardened Octal Buffer/Line Driver, Three-State
中文描述: HC/UH SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CDIP20
封裝: SIDE BRAZED, CERAMIC, DIP-20
文件頁數: 4/10頁
文件大小: 173K
代理商: HCS244DMSR
315
Specifications HCS244MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Data to Output
TPLH
TPHL
VCC = 4.5V
9
+25
o
C
2
21
ns
10, 11
+125
o
C, -55
o
C
2
25
ns
Enable to Output
TPZL
VCC = 4.5V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
30
ns
Enable to Output
TPZH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
Disable to Output
TPLZ
TPHZ
VCC = 4.5V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
30
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
45
pF
1
+125
o
C, -55
o
C
-
45
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
12
ns
1
+125
o
C, -55
o
C
-
18
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
mA
Spec Number
518763
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