2002 Microchip Technology Inc.
Preliminary
DS41111D-page 25
HCS370
Output Low Voltage
D080
V
OL
Output High Voltage
D090
V
OH
D091
V
OH
Internal Pull-down Resistance
D100
Rpd
Data EEPROM Memory
D120
E
D
D121
Vdrw
D122
Tdew
Note 1:
* These parameters are characterized but not tested.
2:
"Typ" column data is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
3:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading
and switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current
consumption.
4:
Should operate down to V
BOR
but not tested below 2.0V.
The test conditions for all I
DD
measurements in active Operation mode are: all I/O pins tristated, pulled to V
DD
. MCLR = V
DD
; WDT
enabled/disabled as specified. The power-down/shutdown current in SLEEP mode does not depend on the oscillator frequency. Power-
down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
or V
SS
. The
current is
the additional current consumed when the WDT is enabled. This current should be added to the base I
DD
or I
PD
measurement.
Output pins
—
—
0.6
V
I
OL
= 8.5 mA, V
DD
= 4.5V
Output pins
LED
V
DD
-0.7
1.5
—
—
—
—
V
V
I
OH
= -3.0 mA, V
DD
= 4.5V
I
OH
= -0.5 mA, V
DD
= 4.5V
S0 - S5, SHIFT
40
75
100
KOhms
If enabled
Endurance
V
DD
for Read/Write
Erase/Write Cycle Time
(1)
200K
2.05
—
1000K
—
4
—
5.5
10
E/W
V
ms
25
°
C at 5V
TABLE 9-1:
DC CHARACTERISTICS: HCS370 (CONTINUED)
DC Characteristics
All Pins Except
Power Supply Pins
Standard Operating Conditions (unless otherwise stated)
Operating Temperature 0
°
C
-40
°
C
≤
T
A
≤
+85
°
C (Industrial)
≤
T
A
≤
+70
°
C (Commercial)
Param
No.
Sym.
Characteristic
Min.
Typ.
Max.
Units
Conditions