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參數(shù)資料
| 型號： | HCS373T |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Octal Three-State Transparent Latch(抗輻射八透明鎖存器) |
| 中文描述： | 輻射加固八路三態(tài)透明鎖存器（抗輻射八透明鎖存器） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HCS373T |
3
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
(2747
μ
m x 2693
μ
m x 533
μ
m
±
51.0
μ
m)
108 x 106 x 21mils
±
2mil
METALLIZATION:
Type: Al Si
Thickness: 11k
±
1k
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
376
PROCESS:
CMOS SOS
Metallization Mask Layout
HCS373T
OE
(1)
Q0
(2)
D1 (4)
Q1 (5)
D2 (7)
Q3
(9)
GND
(10)
Q4
(12)
(15) Q5
(16) Q6
(17) D6
(18) D7
Q7
(19)
V
CC
(20)
(14) D5
D0
(3)
Q2 (6)
(8)
(11)
D4
(13)
NOTE:
The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The
mask series for the HCS373 is TA14303A.
HCS373T
相關PDF資料 |
PDF描述 |
|---|---|
| HCS373DTR | Radiation Hardened Octal Transparent Latch, Three-State |
| HCS373KTR | Radiation Hardened Octal Transparent Latch, Three-State |
| HCT04 | TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,47.8V V(RWM),Axial-9.5 |
| HCT10 | Triple 3-Input NAND Gate(High-Performance Silicon-Gate CMOS) |
| HCT240 | TRANSIENT SUPPRESSOR DIODE,SINGLE,BIDIRECTIONAL,Axial-9 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HCS374D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
| HCS374D/SAMPLE | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
| HCS374DMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
| HCS374HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
| HCS374K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered |
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