參數(shù)資料
型號: HCTS163KMSR
廠商: HARRIS SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: Radiation Hardened Synchronous Counter
中文描述: HCT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CDFP16
文件頁數(shù): 4/9頁
文件大?。?/td> 152K
代理商: HCTS163KMSR
573
Specifications HCTS163MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CP to Qn
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
29
ns
CP to TC
TPHL
TPLH
VCC = 4.5V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
MR to Qn, TC
TPHL
VCC = 4.5V
9
+25
o
C
2
50
ns
10, 11
+125
o
C, -55
o
C
2
75
ns
TE to TC
TPHL
VCC = 4.5V
9
+25
o
C
2
23
ns
10, 11
+125
o
C, -55
o
C
2
29
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power Dissipation
CPD
VCC = 5.0V, f = 1MHz
+25
o
C
-
78
pF
+125
o
C, -55
o
C
-
176
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
+25
o
C
-
10
pF
+125
o
C
-
10
pF
Output Transition Time
TTHL
TTLH
VCC = 4.5V
+25
o
C
-
15
ns
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Spec Number
518600
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