參數(shù)資料
型號(hào): HCTS374T
廠商: Intersil Corporation
元件分類: DRAM
英文描述: 1024 x 18 Synchronous FIFO Memory 68-CPGA -55 to 125
中文描述: 輻射加固八路D類觸發(fā)器,三態(tài),上升沿觸發(fā)
文件頁數(shù): 10/11頁
文件大小: 183K
代理商: HCTS374T
659
HCTS374MS
Die Characteristics
DIE DIMENSIONS:
108 x 106 mils
METALLIZATION:
Type: AlSi
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100
μ
m
4 mils x 4 mils
Metallization Mask Layout
HCTS374MS
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS374 is TA14404A.
OE
(1)
Q0
(2)
D1 (4)
Q1 (5)
Q2 (6)
D2 (7)
GND
(10)
CP
(11)
Q4
(12)
(15) Q5
(16) Q6
(17) D6
(18) D7
Q7
(19)
VCC
(20)
(14) D5
D0
(3)
D3
(8)
Q3
(9)
D4
(13)
Spec Number
518635
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PDF描述
HCTS393KMSR Radiation Hardened Dual 4-Stage Binary Counter
HCTS393D Quadruple 2-Input Exclusive-OR Gates 14-CFP -55 to 125
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HCTS393K Test Bus Controllers 68-CPGA -55 to 125
HCTS393MS Test Bus Controllers 68-CPGA -55 to 125
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