參數(shù)資料
型號: HE8812SG
廠商: Hitachi,Ltd.
英文描述: GaAlAs Infrared Emitting Diode
中文描述: 紅外發(fā)光二極管的GaAIAs
文件頁數(shù): 2/6頁
文件大?。?/td> 140K
代理商: HE8812SG
HE8812SG
Rev.1, Jan. 2003, page 2 of 6
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Symbol
Value
Unit
Forward current
I
F
V
R
Topr
250
mA
Reverse voltage
3
V
Operating temperature
–20 to +60
°C
Storage temperature
Tstg
–40 to +90
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Optical output power
P
O
λ
p
λ
40
mW
I
F
= 200 mA
I
F
= 200 mA
I
F
= 200 mA
I
F
= 200 mA
V
R
= 3 V
V
R
= 0 V, f = 1 MHz
I
F
= 50 mA
I
F
= 50 mA
Peak wavelength
840
870
900
nm
Spectral width
50
60
nm
Forward voltage
V
F
I
R
Ct
2.5
V
μ
A
Reverse current
100
Capacitance
30
pF
Rise time
t
r
t
f
10
ns
Fall time
10
ns
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