參數(shù)資料
型號: HEF4720BN
廠商: NXP Semiconductors N.V.
英文描述: 256-bit, 1-bit per word random access memories
中文描述: 256位,1每字位隨機存取存儲器
文件頁數(shù): 5/16頁
文件大小: 180K
代理商: HEF4720BN
January 1995
5
Philips Semiconductors
Product specification
256-bit, 1-bit per word random access memories
HEF4720B
HEF4720V
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
°
C; C
L
= 50 pF; input transition times
20 ns
V
DD
V
SYMBOL
MIN.
TYP.
MAX.
Write cycle
5
580
220
160
110
50
50
370
130
80
100
40
30
250
100
80
100
30
20
370
130
80
ns
ns
ns
ns
ns
ns
Write cycle time
10
15
t
WC
Address to write
set-up time
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
t
AW
10 000 ns
10 000 ns
10 000 ns
Write pulse width
t
WP
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write recovery time
t
WR
Data set-up time
t
DW
Data hold time
t
DH
Chip select set-up
time with respect
to write pulse
Chip select hold
time with respect
to write pulse
Chip select lead time
over write pulse to
prevent writing
5
10
15
5
10
15
5
10
15
t
CSW
0
0
0
0
0
0
t
CSH
t
CSL
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