參數(shù)資料
型號: HFA06TB120S
英文描述: 1200V 6A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
中文描述: 1200伏6A條HEXFRED二極分立二極管一名D2級,白(HEXFRED二極)封裝
文件頁數(shù): 1/8頁
文件大?。?/td> 148K
代理商: HFA06TB120S
Bulletin PD -20602 rev. C 12/00
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA06TB120S.. Series
-55 to +150
°C
1
W
Ultrafast Recovery
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA06TB120S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6
amps continuous current, the HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA06TB120S is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F(AV)
= 6.0A
Q
rr
(typ.)= 116nC
I
RRM
(typ.)
= 4.4A
t
rr
(typ.)
= 26ns
di
(rec)M
/dt (typ.)* = 100A/μs
D
2
Pak
1
+
3
2
BASE
(N/C)
(A)
(K)
_
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
8.0
80
24
62.5
25
Units
V
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
Absolute Maximum Ratings
*
125°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HFA06TB120SPBF 制造商:Vishay Angstrohm 功能描述:Diode Switching 1.2KV 6A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:Fast Recovery Power Rectifier 制造商:Vishay Intertechnologies 功能描述:HFA06TB120SPBF 1200 V 6 A Surface Mount Ultrafast Soft Recovery Diode - D2PAK
HFA06TB120STR 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 6 A
HFA06TB120STRL 功能描述:整流器 1200 Volt 6.0 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
HFA06TB120STRLP 制造商:Vishay Angstrohm 功能描述:Diode Switching 1.2KV 8A 3-Pin(2+Tab) D2PAK T/R
HFA06TB120STRPBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 6 A