All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certificati" />
參數(shù)資料
型號: HFA1100IBZ96
廠商: Intersil
文件頁數(shù): 2/10頁
文件大?。?/td> 0K
描述: IC OP AMP 850MHZ CFB 8-SOIC
標準包裝: 2,500
放大器類型: 電流反饋
電路數(shù): 1
轉(zhuǎn)換速率: 2300 V/µs
-3db帶寬: 850MHz
電流 - 輸入偏壓: 25µA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 21mA
電流 - 輸出 / 通道: 60mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 11 V,±2.25 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOIC
包裝: 帶卷 (TR)
其它名稱: Q2648182
10
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN2945.9
Die Characteristics
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils
1600
m x 1130m
METALLIZATION:
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8k
±0.4k
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16k
±0.8k
PASSIVATION:
Type: Nitride
Thickness: 4k
±0.5k
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (POWERED UP):
Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1100
+IN
V-
VL
BAL
OUT
-IN
BAL
VH
V+
HFA1100
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