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參數(shù)資料
| 型號(hào)： | XC6VCX130T-2FFG1156I |
| 廠商： | Xilinx Inc |
| 文件頁數(shù)： | 4/52頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC FPGA VIRTEX 6 128K 1156FFGBGA |
| 產(chǎn)品培訓(xùn)模塊： | Virtex-6 FPGA Overview |
| 產(chǎn)品變化通告： | Virtex-6 FIFO Input Logic Reset 18/Apr/2011 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | Virtex® 6 CXT |
| LAB/CLB數(shù)： | 10000 |
| 邏輯元件/單元數(shù)： | 128000 |
| RAM 位總計(jì)： | 9732096 |
| 輸入/輸出數(shù)： | 600 |
| 電源電壓： | 0.95 V ~ 1.05 V |
| 安裝類型： | 表面貼裝 |
| 工作溫度： | -40°C ~ 100°C |
| 封裝/外殼： | 1156-BBGA，F(xiàn)CBGA |
| 供應(yīng)商設(shè)備封裝： | 1156-FCBGA（35x35） |
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Virtex-6 CXT Family Data Sheet
DS153 (v1.6) February 11, 2011
Product Specification
12
Table 10: Recommended Operating Conditions
Symbol
Description
Min
Max
Units
VCCINT
Internal supply voltage relative to GND, Tj =0C to +85C0.95
1.05
V
Internal supply voltage relative to GND, Tj =–40C to +100C0.95
1.05
V
VCCAUX
Auxiliary supply voltage relative to GND, Tj =0C to +85C
2.375
2.625
V
Auxiliary supply voltage relative to GND, Tj =–40C to +100C
2.375
2.625
V
VCCO(1)(2)(3)
Supply voltage relative to GND, Tj =0C to +85C
1.14
2.625
V
Supply voltage relative to GND, Tj = –40C to +100C
1.14
2.625
V
VIN
2.5V supply voltage relative to GND, Tj =0C to +85C
GND – 0.20
2.625
V
2.5V supply voltage relative to GND, Tj =–40C to +100C
GND – 0.20
2.625
V
2.5V and below supply voltage relative to GND, Tj =0C to +85CGND – 0.20 VCCO 0.2
V
2.5V and below supply voltage relative to GND, Tj =–40C to +100CGND – 0.20 VCCO 0.2
V
IIN(4)
Maximum current through any pin in a powered or unpowered bank when forward
biasing the clamp diode.
–10
mA
VBATT(5)
Battery voltage relative to GND, Tj =0C to +85C1.0
2.5
V
Battery voltage relative to GND, Tj = –40C to +100C1.0
2.5
V
VFS(6)
External voltage supply for eFUSE programming
2.375
2.625
V
Notes:
1.
Configuration data is retained even if VCCO drops to 0V.
2.
Includes VCCO of 1.2V, 1.5V, 1.8V, and 2.5V.
3.
The configuration supply voltage VCC_CONFIG is also known as VCCO_0.
4.
A total of 100 mA per bank should not be exceeded.
5.
VBATT is required only when using bitstream encryption. If battery is not used, connect VBATT to either ground or VCCAUX.
6.
When not programming eFUSE, connect VFS to GND.
7.
All voltages are relative to ground.
Table 11: DC Characteristics Over Recommended Operating Conditions(1)(2)
Symbol
Description
Min
Typ
Max
Units
VDRINT
Data retention VCCINT voltage (below which configuration data might be lost)
0.75
–
V
VDRI
Data retention VCCAUX voltage (below which configuration data might be lost)
2.0
–
V
IREF
VREF leakage current per pin
–
10
A
IL
Input or output leakage current per pin (sample-tested)
–
10
A
CIN(3)
Die input capacitance at the pad
–
8
pF
IRPU
Pad pull-up (when selected) @ VIN =0V, VCCO = 2.5V
20
–
80
A
Pad pull-up (when selected) @ VIN =0V, VCCO =1.8V
8
–
40
A
Pad pull-up (when selected) @ VIN =0V, VCCO =1.5V
5
–
30
A
Pad pull-up (when selected) @ VIN =0V, VCCO =1.2V
1
–
20
A
IRPD
Pad pull-down (when selected) @ VIN = 2.5V
3
–
80
A
IBATT
Battery supply current
–
150
nA
n
Temperature diode ideality factor
–
1.0002
–
n
r
Series resistance
–5
–
Notes:
1.
Typical values are specified at nominal voltage, 25°C.
2.
Maximum value specified for worst case process at 25°C.
3.
This measurement represents the die capacitance at the pad, not including the package.
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