參數(shù)資料
型號(hào): HFA3101
廠商: Intersil Corporation
英文描述: Gilbert Cell UHF Transistor Array(Gb 單元超高頻晶體管陣列)
中文描述: 吉爾伯特細(xì)胞超高頻晶體管陣列(千兆單元超高頻晶體管陣列)
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 905K
代理商: HFA3101
3-7
of the circuit upon higher level signals. The drop across R
EE
must be taken into consideration when setting the current
source value.
Figure 3B depicts the use of a common resistor sharing the
current through the cell which is used for temperature
compensation as the lower pair V
BE
drop at the rate of
-2mV/
o
C.
Figure 3C uses a split supply.
Design Example: Down Converter Mixer
Figure 4 shows an example of a low cost mixer for cellular
applications.
The design flexibility of the HFA3101 is demonstrated by a
low cost, and low voltage mixer application at the 900MHz
range. The choice of good quality chip components with their
self resonance outside the boundaries of the application are
important. The design has been optimized to accommodate
the evaluation of the same layout for various quiescent
current values and lower supply voltages. The choice of R
E
became important for the available overhead and also for
maintaining an AC true impedance for high frequency
signals. The value of 27
has been found to be the optimum
minimum for the application. The input impedances of the
HFA3101 base input ports are high enough to permit their
termination with 50
resistors. Notice the AC termination by
decoupling the bias circuit through good quality capacitors.
The choice of the bias has been related to the available
power supply voltage with the values of R
1
, R
2
and R
BIAS
splitting the voltages for optimum V
CE
values. For evaluation
of the cell quiescent currents, the voltage at the emitter
resistor R
E
has been recorded.
The gain of the circuit, being a function of the load and the
combined emitter resistances at high frequencies have been
kept to a maximum by the use of an output match network.
The high output impedance of the HFA3101 permits
FIGURE 3A.
FIGURE 3B.
FIGURE 3C.
FIGURE 3.
V
CC
R
B1
R
1
R
2
R
BIAS
R
E
R
EE
R
EE
L
CH
1
2
3
4
8
7
6
5
Q
5
Q
6
Q
1
Q
2
Q
3
Q
4
R
B2
V
CC
R
B1
R
1
R
2
R
BIAS
R
E
R
EE
R
EE
1
2
3
4
8
7
6
5
Q
5
Q
6
Q
1
Q
2
Q
3
Q
4
R
B2
R
C
L
CH
V
EE
R
B1
R
1
R
BIAS
R
E
R
EE
R
EE
1
2
3
4
8
7
6
5
Q
5
Q
6
Q
1
Q
2
Q
3
Q
4
R
B2
V
CC
L
CH
R
2
27
L
CH
390nH
1
2
3
4
8
7
6
5
Q
5
Q
6
Q
1
Q
2
Q
3
Q
4
V
CC
0.01
0.01
110
220
0.1
V
CC
3V
75MHz
2K
5p TO 12p
LO IN
51
825MHz
51
900MHz
IF OUT
RF IN
0.01
0.01
0.01
330
FIGURE 4. 3V DOWN CONVERTER APPLICATION
HFA3101
相關(guān)PDF資料
PDF描述
HFA3101BZ96 Gilbert Cell UHF Transistor Array
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HFA3134 Ultra High Frequency Matched Pair Transistors
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HFA3101_04 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Gilbert Cell UHF Transistor Array
HFA3101B 功能描述:IC TRANSISTOR ARRAY UHF 8-SOIC RoHS:否 類別:RF/IF 和 RFID >> RF 混頻器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- RF 型:W-CDMA 頻率:2.11GHz ~ 2.17GHz 混頻器數(shù)目:1 增益:17dB 噪音數(shù)據(jù):2.2dB 次要屬性:- 電流 - 電源:11.7mA 電源電壓:2.7 V ~ 3.3 V 包裝:托盤 封裝/外殼:12-VFQFN 裸露焊盤 供應(yīng)商設(shè)備封裝:12-QFN-EP(3x3)
HFA3101B96 功能描述:IC TRANS ARRAY NPN GILBERT 8SOIC RoHS:否 類別:RF/IF 和 RFID >> RF 混頻器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:100 系列:- RF 型:W-CDMA 頻率:2.11GHz ~ 2.17GHz 混頻器數(shù)目:1 增益:17dB 噪音數(shù)據(jù):2.2dB 次要屬性:- 電流 - 電源:11.7mA 電源電壓:2.7 V ~ 3.3 V 包裝:托盤 封裝/外殼:12-VFQFN 裸露焊盤 供應(yīng)商設(shè)備封裝:12-QFN-EP(3x3)
HFA3101BZ 功能描述:射頻雙極小信號(hào)晶體管 TXARRAY NPN GILBERT CELL 8W RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
HFA3101BZ 制造商:Intersil Corporation 功能描述:TRANSISTOR ARRAY