參數(shù)資料
型號(hào)： HFA3134IH96
廠商： HARRIS SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： Ultra High Frequency Matched Pair Transistors
中文描述： 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 2/5頁
文件大小： 52K
代理商： HFA3134IH96
4-451
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (R
B
≤
10k
to GND) . . . . . . . . . . . .11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . .14mA at T
J
=150
o
C
26mA at T
J
=125
o
C
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Thermal Resistance (Typical, Note 1)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . .300
o
C
(Soldering 10s, Lead Tips Only)
θ
JA
(
o
C/W)
350
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current spec-
ification.
Electrical Specifications
T
A
= 25
o
C
PARAMETER
SYMBOL
TEST CONDITIONS
TEST
LEVEL
(NOTE 3)
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector-to-Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
A
12
21
-
V
Collector-to-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 100
μ
A, I
B
= 0
A
4
9
-
V
V
(BR)CER
I
C
= 100
μ
A, R
B
= 10k
A
11
17
-
V
Emitter-to-Base Breakdown Voltage (Note 4)
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
B
-
6
-
V
Collector-Cutoff-Current
I
CEO
V
CE
= 6V, I
B
= 0
A
-5
-
5
nA
Collector-Cutoff-Current
I
CBO
V
CB
= 8V, I
E
= 0
A
-5
-
5
nA
Emitter-Cutoff-Current (Note 5)
I
EBO
V
EB
= 1V, I
C
= 0
B
-
1
-
pA
Collector-to-Collector Leakage
C
-
1
-
nA
Collector-to-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10mA, I
B
= 1mA
A
-
95
250
mV
Base-to-Emitter Voltage (Note 5)
V
BE
I
C
= 10mA, V
CE
= 2V
A
-
780
1000
mV
Q
1
to Q
2
Base-to-Emitter Voltage Match
(Note 5)
V
BE
I
C
= 10mA, V
CE
= 2V
A
-
1.2
6
mV
I
C
= 1mA, V
CE
= 2V
A
-
1.0
6
mV
I
C
= 0.1mA, V
CE
= 2V
A
-
0.7
6
mV
Base-to-Emitter Voltage Drift
I
C
= 10mA
C
-
-1.5
-
mV/
o
C
DC Forward-Current Transfer Ratio
(Note 5)
h
FE
I
C
= 10mA, V
CE
= 2V
A
48
80
200
I
C
= 1mA, V
CE
= 2V
A
48
87
200
I
C
= 0.1mA, V
CE
= 2V
A
48
90
200
I
C
= 10mA, V
CE
= 5V
A
48
96
200
I
C
= 1mA, V
CE
= 5V
A
48
96
200
I
C
= 0.1mA, V
CE
= 5V
A
48
100
200
Q
1
to Q
2
Current Transfer Ratio Match
h
FE
1mA
≤
I
C
≤
10mA,
1V
≤
V
CE
≤
5V
A
-
2
8
%
Early Voltage
V
A
I
C
= 1mA,
V
CE
= 3V
A
20
30
-
V
HFA3134, HFA3135
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HFA3134IHZ96 功能描述:射頻雙極小信號(hào)晶體管 W/ANNEAL TXARRAY 2X NPN MATCHED INDE RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
HFA3135 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Ultra High Frequency Matched Pair Transistors
HFA3135IH96 功能描述:IC TRANS ARRAY PNP MATCH SOT23-6 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
HFA3135IHZ96 功能描述:射頻雙極小信號(hào)晶體管 W/ANNEAL TXARRAY 2X PNP MATCHED INDEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
HFA320NJ40C 功能描述:DIODE HEXFRED 400V 321A TO-244AB RoHS:是 類別:半導(dǎo)體模塊 >> 二極管，整流器 系列:HEXFRED® 標(biāo)準(zhǔn)包裝:10 系列:- 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.45V @ 30A 電流 - 在 Vr 時(shí)反向漏電:15µA @ 400V 電流 - 平均整流 (Io)（每個(gè)二極管）:30A 電壓 - (Vr)（最大）:400V 反向恢復(fù)時(shí)間(trr):65ns 二極管類型:標(biāo)準(zhǔn) 速度:快速恢復(fù) = 200mA（Io） 二極管配置:2 個(gè)獨(dú)立式 安裝類型:底座安裝 封裝/外殼:ISOTOP 供應(yīng)商設(shè)備封裝:ISOTOP? 包裝:管件
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