參數(shù)資料
型號： HFA3135
廠商： Intersil Corporation
英文描述： Ultra High Frequency Matched Pair Transistors
中文描述： 超高頻晶體管配對
文件頁數(shù)： 2/5頁
文件大?。?/td> 52K
代理商： HFA3135
4-451
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (R
B
≤
10k
to GND) . . . . . . . . . . . .11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . .14mA at T
J
=150
o
C
26mA at T
J
=125
o
C
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Thermal Resistance (Typical, Note 1)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . .300
o
C
(Soldering 10s, Lead Tips Only)
θ
JA
(
o
C/W)
350
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current spec-
ification.
Electrical Specifications
T
A
= 25
o
C
PARAMETER
SYMBOL
TEST CONDITIONS
TEST
LEVEL
(NOTE 3)
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector-to-Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
A
12
21
-
V
Collector-to-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 100
μ
A, I
B
= 0
A
4
9
-
V
V
(BR)CER
I
C
= 100
μ
A, R
B
= 10k
A
11
17
-
V
Emitter-to-Base Breakdown Voltage (Note 4)
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
B
-
6
-
V
Collector-Cutoff-Current
I
CEO
V
CE
= 6V, I
B
= 0
A
-5
-
5
nA
Collector-Cutoff-Current
I
CBO
V
CB
= 8V, I
E
= 0
A
-5
-
5
nA
Emitter-Cutoff-Current (Note 5)
I
EBO
V
EB
= 1V, I
C
= 0
B
-
1
-
pA
Collector-to-Collector Leakage
C
-
1
-
nA
Collector-to-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10mA, I
B
= 1mA
A
-
95
250
mV
Base-to-Emitter Voltage (Note 5)
V
BE
I
C
= 10mA, V
CE
= 2V
A
-
780
1000
mV
Q
1
to Q
2
Base-to-Emitter Voltage Match
(Note 5)
V
BE
I
C
= 10mA, V
CE
= 2V
A
-
1.2
6
mV
I
C
= 1mA, V
CE
= 2V
A
-
1.0
6
mV
I
C
= 0.1mA, V
CE
= 2V
A
-
0.7
6
mV
Base-to-Emitter Voltage Drift
I
C
= 10mA
C
-
-1.5
-
mV/
o
C
DC Forward-Current Transfer Ratio
(Note 5)
h
FE
I
C
= 10mA, V
CE
= 2V
A
48
80
200
I
C
= 1mA, V
CE
= 2V
A
48
87
200
I
C
= 0.1mA, V
CE
= 2V
A
48
90
200
I
C
= 10mA, V
CE
= 5V
A
48
96
200
I
C
= 1mA, V
CE
= 5V
A
48
96
200
I
C
= 0.1mA, V
CE
= 5V
A
48
100
200
Q
1
to Q
2
Current Transfer Ratio Match
h
FE
1mA
≤
I
C
≤
10mA,
1V
≤
V
CE
≤
5V
A
-
2
8
%
Early Voltage
V
A
I
C
= 1mA,
V
CE
= 3V
A
20
30
-
V
HFA3134, HFA3135
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