7
DESIGN INFORMATION
External AGC Application Components Description
(Please refer to Typical RF and Front End AGC Application Diagram)
NOTE:In order to avoid input insertion losses and maintain the Noise
Figure of this application optimized, the VSWR of the LNA input at-
tenuator scheme is directly impacted by the input shunt PIN diode im-
pedance when AGC is in action. This mismatch is absorbed by the
duplexer/filter and there is no significant impact in its duplex charac-
teristics to both antenna and transmitter ports.
R3 and R4
limit the output attenuation range and output
VSWR.
R1
sets the scale factor, temperature coefficient and range
of the gain control voltage.
R2
sets the turn-on point for the output PIN diode attenuator
and
R5
sets the turn-on point for the input PIN diode attenu-
ator by shunting to ground some of the PIN diode bias cur-
rent. By making R5 a smaller value than R2, the output
attenuator turns on first, to optimize NF. Making R5 = R2 will
turn both PIN diodes simultaneously to optimize the IIP3 dur-
ing the initial AGC action. The R2/R5 combination can be tai-
lored to specific AGC characteristics.
R6
generates the reference current which is used to set the
operating point of all the major RF and IF transistors. A pro-
portional
to
temperature
37mVat25
o
C is applied to this resistor. PTAT biasing keeps
the gain temperature independent. A 10% variation from
523
is allowed. Lower values increase the total LNA and
Mixer bias currents.
(PTAT)
voltage
of
about
C1
filters noise from the gain control source to reduce
unwanted AM modulation.
C2 and C4
provide DC isolation for PIN diode biasing. Their
values are chosen to provide series resonance cancelling of
the diode package and PC board inductances.
C3 and C6
decouple the PIN diode bias pins. Failure to
decouple these pins may cause LNA oscillations.
LE
adds degeneration to the LNA input for higher input inter-
cept points. This combination of degeneration and a higher
LNA V
CC
(VLNA) improves considerably the input intercept
point with a slight decrease in gain. LE shall have very high
Q and can be build with a small PC trace.
L1 and L4
permit DC biasing of the PIN diodes and RF iso-
lation. Several types of 82nH inductors have SRF near
900MHz thus maximizing the RF isolation.
L2 and C13
are part of the output matching network and
provides the DC bias path for the open collector output.
R7 and R8
define the Real part of the CDMA and FM output
ports impedances. Unloaded “Q” of the coils used for proper
biasing of these ports have to be taken into account when
defining these values. The total load presented to these
ports also define the achievable gain of the mixers. Because
there is no internal feedback between the complementary
ports of the differential channel, the loads and ports can be
split into independent ports referenced to ground.
L7, L8 and L9, L10
have two functions: They provide a DC
path to ground required for proper operation of the CDMA
and FM differential outputs and can also be part of the match
network between these ports and IF filters.
C9
,
C10
and
C12
are part of a match network to the suggested filters.
L9
,
L10
and
C12
are part of a current summer network for a differen-
tial to single end conversion.
L12
,
L13
and
C11
form a high
“Q” match network between the converter and the sug-
gested filter for the SAW IP3 distortion optimization.
All other unlabeled components on the schematics are
bypass/decoupling capacitors. Values are chosen based on
their SRF.
HFA3665