7
Receiver Notes:
1. 2.0 mm from where leads enter case.
2. The signal output is referred to V
CC
, and does not reject noise from the V
CC
power supply. Consequently, the V
CC
power supply must
be filtered. The recommended power supply is +5 V on V
CC
for typical usage with +5 V ECL logic. A -5 V power supply on V
EE
is
used for test purposes to minimize power supply noise.
3. Typical specifications are for operation at T
A
= 25
°
C and V
CC
= +5 V
DC
.
4. The test circuit layout should be in accordance with good high frequency circuit design techniques.
5. Measured with a 9-pole “brick wall” low-pass filter [Mini-Circuits
TM
, BLP-100*] with -3 dB bandwidth of 100 MHz.
6. -11.0 dBm is the maximum peak input optical power for which pulse-width distortion is less than 1 ns.
7. Electrical bandwidth is the frequency where the responsivity is -3 dB (electrical) below the responsivity measured at 50 MHz.
8. The specifled rise and fall times are referenced to a fast square wave optical source. Rise and fall times measured using an LED
optical source with a 2.0 ns rise and fall time (such as the HFBR-1312T) will be approximately 0.6 ns longer than the specifled rise
and fall times. E.g.: measured t
r,f
~ [(specifled t
r,f
)
2
+ (test source optical t
r,f
)
2
]
1/2
.
9. 10 ns pulse width, 50% duty cycle, at the 50% amplitude point of the waveform.
10. Percent overshoot is defined as: ((V
PK
- V
100%
)/V
100%
) x 100% . The overshoot is typically 2% with an input optical rise time
≤
1.5 ns.
11. The bandwidth*risetime product is typically 0.41 because the HFBR-2316T has a second-order bandwidth limiting characteristic.
Figure 6. HFBR-2316T Receiver Test Circuit.
Figure 7. Typical Output Spectral
Noise Density vs. Frequency.
Figure 8. Typical Pulse Width
Distortion vs. Peak Input Power.
Figure 9. Typical Rise and Fall Times
vs. Temperature.
Figure 10. Normalized Receiver
Spectral Response.
150
0
50
100
150
200
250
FREQUENCY – MH
Z
125
100
75
50
25
0
300
S
Z
3.0
0
20
40
60
100
P
R
– INPUT OPTICAL POWER – μW
2.5
2.0
1.5
1.0
0.5
0
120
P
80
6.0
-60
-40
-20
0
20
40
TEMPERATURE – °C
5.0
4.0
3.0
2.0
1.0
60
r
,
f
80
100
t
f
t
r
*Mini-Circuits Division of Components Corporation.
1.1
900 1000 1100 1200 1300 1400
λ
– WAVELENGTH – nm
1.0
0.9
0.8
0.7
0.6
0.1
1500
N
0.5
0.4
0.3
0.2
1600 1700
V = 0 V
6
V
O
2
3, 7
TEST
LOAD
– 5 pF
500
100 pF
0.1 μF
V = -5 V
10
500
100 pF
0.1 μF
1 GHz FET PROBE
V = -5 V
HFBR-2316T
<