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參數(shù)資料
| 型號： | HGT1S14N41G3VLS |
| 廠商： | Intersil Corporation |
| 英文描述： | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N溝道,邏輯電平,電壓箝位IGBTs) |
| 中文描述： | 第14A，410V N溝道，邏輯電平，電壓鉗位的IGBT（第14A，410V ?溝道，邏輯電平，電壓鉗位的IGBT） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 146K |
| 代理商： | HGT1S14N41G3VLS |
5
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
8
4
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
16
24
12
50
25
75
100
125
150
20
28
0
175
V
GE
= 5V
V
G
,
1.2
1.6
1.0
1.4
1.8
2.0
-50
25
100
175
T
J
, JUNCTION TEMPERATURE (
o
C)
2.2
I
CE
= 1mA
V
CE
= V
GE
L
μ
A
0.1
10
100
25
50
75
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
125
1000
10000
1
175
V
ECS
= 24V
V
CES
= 300V
V
CES
= 250V
μ
s
T
J
, JUNCTION TEMPERATURE (
o
C)
2
14
4
10
6
8
12
16
25
50
75
100
150
125
175
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1k
RESISTIVE t
OFF
INDUCTIVE t
OFF
RESISTIVE t
ON
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
5
10
15
20
25
0
800
1600
2000
1200
2400
400
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
0
16
40
Q
G
, GATE CHARGE (nC)
4
0
56
V
G
,
8
8
24
32
48
2
6
I
G(REF)
= 1mA, R
L
= 1.25
, T
J
= 25
o
C
V
CE
= 6V
V
CE
= 12V
HGT1S14N41G3VLS, HGTP14N41G3VL
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| HGTP14N41G3VL | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N溝道,邏輯電平,電壓箝位IGBTs) |
| HGT1S20N35G3VLS | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S14N41G3VLS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N41G3VLT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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