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參數(shù)資料
| 型號： | HGT1S3N60C3D |
| 廠商： | Harris Corporation |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 第6A，600V的，的ufs系列N溝道IGBT的與反平行Hyperfast二極管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 327K |
| 代理商： | HGT1S3N60C3D |
3-10
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
μ
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
2.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.65
2.0
V
T
C
= 150
o
C
-
1.85
2.2
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
25V
-
-
±
250
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 82
V
GE
= 15V
L = 1mH
V
CE(PK)
= 480V
18
-
-
A
V
CE(PK)
= 600V
2
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.3
-
V
On-State Gate Charge
Q
G(ON)
IC = IC110,
VCE = 0.5 BVCES
V
GE
= 15V
-
10.8
13.5
nC
V
GE
= 20V
-
13.8
17.3
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
-
5
-
ns
Current Rise Time
t
RI
-
10
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
325
400
ns
Current Fall Time
t
FI
-
130
275
ns
Turn-On Energy
E
ON
-
85
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
245
-
μ
J
Diode Forward Voltage
V
EC
I
EC
= 3A
-
2.0
2.5
V
Diode Reverse Recovery Time
t
RR
I
EC
= 3A, dI
EC
/dt = 200A/
μ
s
-
22
28
ns
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
17
22
ns
Thermal Resistance
R
θ
JC
IGBT
-
-
3.75
o
C/W
Diode
-
-
3.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
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| HGT1S3N60C3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S3N60C3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB |
| HGT1S5N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
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